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SiC Cree Power Module Includes SiC MOSFETs, SiC Schottky Diodes

Team Industry 2.0
November 25, 2012

Cree has launched all-SiC Cree power module.  Rated at 100 A current handling and 1,200 V blocking, the power module includes SiC (silicon carbide) MOSFETs and SiC Schottky diodes in 50 mm half-bridge configuration rated to 150°C max junction temperature.

 

The SiC components enable module to be operated at switching frequencies up to 100 kHz. Helping reduce size and weight of power conversion system, product suits high power converter, industrial motor drive, solar inverter, and UPS applications.

 

Cree, Inc.
4600 Silicon Dr
Durham , NC  27703   USA
Tel:+1- 919-313-5300
Website: www.cree.com

 

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